The results can be used in modeling of conductivity modulation power devices under localized lifetime control. 其结果可用于局域寿命控制下电导调制器件的建模分析。
Technology of Localized Lifetime Control in Conductivity Modulation Power Devices 电导调制器件局域寿命控制技术
The modeling and analysis methods used here are universal and also can be used in other conductivity modulation power devices. 文中所采用的分析方法具有一定的普适性,其他类似结构和器件亦可采用此方法进行分析。
In addition, this paper describes the photocurrent effect and the conductivity modulation effect on diffused resistor s as well as the model in which the diffused resistor varies with γ radiation rate. 论述了扩散电阻的光电流效应和电导调制效应,以及扩散电阻随γ剂量率变化的模型。
A theoretical model is presented to determine the current dependence of base resistance RB ( IB) of bipolar transistor at high current, based on the effect of base conductivity modulation. 本文针对基极电阻随电流变化的实验事实,根据基区电导调制效应,提出了工作在大电流密度水平时,基极电阻RB(IB)的理论模型;
The switch speed of power devices t_ ( off) will be increased, during the forward voltage drop Vp decreasing, because of conductivity modulation effects. It causes the operating frequency of power devices limited and switch loss increased. 这类器件在正向导通电压VF降低的同时,其关断时间t(off)却明显增长,这使其工作频率受限、开关功耗增大。
A Transport Model for Conductivity Modulation Power Device with Localized Lifetime Control by Low Energy He Ion Implantation 低能He注入局域寿命控制电导调制型功率器件输运模型
IGBT combines the features of voltage-control in MOS devices and conductivity modulation in bipolar devices. IGBT是一种具有MOS电压控制和双极导通调制相结合的器件。
In this work, using ILs which have good conductivity and optical transmission performance as media, the electro-optic modulation characteristic is firstly investigated by experiment. 本文以具有良好的导电导光性能的离子液体为介质,采用实验的方法首次研究了离子液体的电光调制特性。
Considering the conductivity modulation effect, a substrate resistance model adjustable with the SB spacing is proposed. 提出了一种考虑了电导率调制效应的、随SB间距可调的衬底电阻模型。